UHF-ECR Chamber

For next generation etching of advanced oxides and low-k dielectric films, Hitachi developed the new UHF ECR chamber. The UHF ECR chamber capabilities include high etch rate, precise anisotropic etching, excellent plasma uniformity, and repeatability. Fluorine radical control mechanisms are incorporated to increase anisotropy and enhance profile control. A unique chamber access design allows for easy maintenance, maximum uptime, and increased productivity. The Hitachi UHF ECR chamber can be running production wafers within four hours of a wet clean.