 |  | Microwave ECR Chamber |
STI Etch
Shallow Trench Isolation (STI) is a rapidly developing vital technology for cutting edge semiconductor products. Hitachi provides tools to customize STI profiles for effective gap fill in subsequent planarization steps. Hitachi equipment allows process parameters to be changed to:
- Round the top of the silicon trench
- Round the bottom corner of the silicon trench
- Round the bottom center of the silicon trench
- A combination of them all
Hitachi etchers can etch the silicon trench from an incoming defined hardmask or can perform an in-situ etch of the nitride mask followed by the silicon trench etch.