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Hitachi Heat Sink |
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| | Hitachi Heat Sink |
Specifications  | | | Range | Minimum
Size | Tolerance |
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| Platform | Length (X) | X | 0.4 | ± 0.05mm |
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| Width (Y) | Y | 0.4 | ± 0.05 mm | | as V Groove OSA | Thickness (t) | 0.3 ~ 2 | | ± 0.02mm |
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| as Heat Sink | Thickness (t) | | 0.15 | ± 0.02mm |
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| SiO2 film thickness | | 0.3 ~ 1.0 | | ± 10%µm |
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| V-Groove | Width (W1) | 100 ~ 155 | | ± 0.5µm |
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| Width (W2) | 155 ~ 1600 | | ± 2µm | | Depth (D1) | 70 ~ 109 | | | | Depth (D2) | 70 ~ 1000 | | | | Length | Lv | | | | Metallization Pads | Structure | Ti-Pt-Au | | |
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| Thickness | 0.5 ~ 1.5 | | ± 20%µm | | Positioning Tolerance to V-Groove | | | | ± 0.5µm |
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| Metallization Traces | Structure | Ti-Pt-Au | | |
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| Thickness | 0.5 ~ 1.5 | | ± 20%µm | | Standard Metal Mask Line Width/Space Distance | | 200/200 | | ± 50µm |
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| Standard Photolithography Line Width/Space Distance | | 30/30 | | ± 10µm |
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| Solder | Structure | Au-Sn
Pb-Sn | | |
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| Thickness | 1 ~ 30 | | ± 20µm | | Positioning Tolerance to V-Groove | | | | ± 1.5µm |
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| Material Properties |
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| | SiC | AlN | Al2O3 | SiO2 | Si |
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| Bulk density (kg/m3) | 3.2 | 3.3 | 3.8 | 2.2 | 2.3 |
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| Thermal Expansion Coefficient (x10-6/K) | 3.7 | 4.5 | 7.2 | 0.6 | 3.5 |
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| Thermal Conductivity (W/mxK, RT) | 270 | 170 ~ 200 | 35 | 1 | 145 |
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| Volume resistivity (Ohmcm, RT) | >1010 | >1013 | >1013 | >1013 | |
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| Dielectric Constant (1MHz, RT) | 100 | 9.2 | 10 | 3.3 | 11.7 |
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| Bending Strength (Mpa, RT) | 392 | 343 | 294 | | |
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| Heat Sink Materials |
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| SiC | (SC-101) Silicon Carbide Ceramic |
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| AlN | Aluminum Nitride Ceramic |
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| Al2O3 | Alumina Ceramic |
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| SiO2 | Synthetic quartz |
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| Si | Silicon (crystal, conductive/non-conductive types) |
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